參數(shù)資料
型號(hào)： LM3655TLX
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 電源管理
英文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, BGA25
封裝： 2.5 X 2.5 MM, MICRO SMD, 25 PIN
文件頁(yè)數(shù)： 9/21頁(yè)
文件大?。?/td> 833K
代理商： LM3655TLX
14.0 Required External Components
20111510
14.1 CHARGE PASS TRANSISTOR (Q1)
Q1 is a PNP device capable of sustaining a minimum of 0.8W continuous power dissipation. ON Semiconductor MMJT9435 or
equivalent is to be used.
14.2 DRIVER TRANSISTOR AND BIAS RESISTORS (R2, R3 AND R5)
The NPN transistor is a MMBT3904LT1 type (or equivalent) with a BV
CEO > 40V. The base resistor (R2) is 1K. The emitter and
collector resistors (R3 and R5) are 75
each. The power rating on R3 and R5 is to be at least 100 mW.
14.3 EXTERNAL CHARGER SENSE RESISTOR (R4)
Value = 2K total for R4A+ R4B. Two series resistors are used for higher reliability. Having two resistors in series significantly
reduces the probability of the entire 2K of resistance being shorted. The power rating of R4A and R4B needs to be at least
100 mW each.
14.4 CAPACITORS
The capacitor C1 is to be a 0.1 uF, which is used for both RF bypass and ESD protection reasons. The capacitors C2 and C3 are
0.1 uF capacitors, which are used in the application to keep M4 from momentarily opening when the ground plane of the phone
takes an ESD discharge. These capacitors C2 and C3 should be adjacent to the pins on the IC. C4 on Radio B+ is 10uF.
14.5 FUSE (F1)
Parameter
Min
Typ
Max
Units
Operating Temperature
55
25
90
C
Insulation Resistance (After Opening)
10000
-
Opening Time at 25C
100% of Ampere Rating
200% of Ampere Rating
300% of Ampere Rating
4
5
0.2
-
Hour
Sec.
Ampere Rating
2.0
A
Nominal Resistance Cold
a
0.036
Melting I
2t
0.104
A
2Sec.
Volting Rating
32
V
Interrupting Rating @ 32V AC/DC
35
A
15.0 Electrical Characteristics
15.1 GENERAL SPECIFICATION AND ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Min
Typ
Max
Units
Pin Voltage Ratings
LM3655
www.national.com
17
相關(guān)PDF資料
PDF描述
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