參數(shù)資料
型號: LC749450NW
廠商: Sanyo Electric Co.,Ltd.
英文描述: Silicon Gate CMOS IC Digital RGB Image Processor IC
中文描述: 硅柵CMOS集成電路數(shù)字RGB圖像處理器芯片
文件頁數(shù): 7/17頁
文件大小: 81K
代理商: LC749450NW
No.8096-7/17
LC749450NW
Allowable Operating Ranges
at Ta = –30 to +70°C
Parameter
Symbol
Conditions
Ratings
typ
Unit
min
max
Supply voltage (I/O)
Supply voltage (core)
Input voltage range
DV
DD
33
V
DD
18
V
IN
3.15
1.71
3.3
1.8
3.45
1.89
5.5
V
V
V
0
Input and Output Pin Capacitance
at Ta = 25°C, V
DD
= V
I
= 0 V
Parameter
Symbol
Conditions
Ratings
typ
Unit
min
max
Input pins
Output pins
I/O pins
C
IN
C
OUT
C
I/O
f = 1 MHz
f = 1 MHz
f = 1 MHz
10
10
10
pF
pF
pF
DC Characteristics
at Ta = –30 to +70°C, V
DD
33 = 3.15 to 3.45 V, V
DD
18 = 1.71 to 1.89 V
*
1: Some input pins have a built-in pull-down resistor. Note that there are thus certain circuit structures for which the static current drain cannot be
guaranteed.
Parameter
Symbol
Conditions
Ratings
typ
Unit
min
max
High-level input voltage
V
IH
5 V inputs
5 V Schmitt inputs
5 V inputs
5 V Schmitt inputs
V
I
= V
DD
V
I
= V
DD
, with pull-down resistor used
V
I
= V
SS
T08 type, I
OH
= –4 mA
T12 type, I
OH
= –8 mA
T08 type, I
OL
= 4 mA
T12 type, I
OL
= 8 mA
In the high-impedance output state
2.0
1.50
–0.3
–0.3
–10
+10
–10
5.5
5.5
0.8
0.90
+10
+100
+10
V
V
V
V
μA
μA
μA
V
V
V
V
μA
k
mA
μA
Low-level input voltage
V
IL
High-level input current
I
IH
Low-level input current
I
IL
High-level output voltage
V
OH
V
DD
– 0.8
V
DD
– 0.8
Low-level output voltage
V
OL
0.4
0.4
+10
118
Output leakage current
Pull-down resistor
Operating current drain
Static current drain
*
1
I
OZ
RDN
IDDOP
IDDST
–10
43
58
tck = 135 MHz
Outputs open, V
I
= V
SS
or V
DD
500
300
Specifications
Absolute Maximum Ragings
at V
SS
= 0 V
Parameter
Symbol
DV
DD
33
AV
DD
33
DV
DD
18
DPV
DD
18
V
I
V
O
Pd max
Tstg
Topr
Conditions
Ratings
Unit
Maximum supply voltage (I/O)
–0.3 to +3.96
V
Maximum supply voltage (core)
–0.3 to +2.16
V
Input voltage
Output voltage
Allowable power dissipation
Storage temperature
Operating temperature
–0.5 to 6.0
V
V
W
°C
°C
–0.3 to V
DD
+ 0.3
1
–55 to +125
–30 to +70
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