參數(shù)資料
型號(hào)： L6726ATR
廠商： 意法半導(dǎo)體
英文描述： Single phase PWM controller
中文描述： 單相PWM控制器
文件頁(yè)數(shù)： 10/24頁(yè)
文件大?。?/td> 399K
代理商： L6726ATR
Driver section
L6726A
10/24
5
Driver section
The integrated high-current drivers allow using different types of power MOSFET (also
multiple MOSFETs to reduce the equivalent R
dsON
), maintaining fast switching transition.
The driver for high-side MOSFET uses BOOT pin for supply and PHASE pin for return. The
driver for low-side MOSFET uses the VCC pin for supply and GND pin for return.
The controller embodies an anti-shoot-through and adaptive dead-time control to minimize
low side body diode conduction time, maintaining good efficiency while saving the use of
Schottky diode:
to check for high-side MOSFET turn off, PHASE pin is sensed. When the voltage at
PHASE pin drops down, the low-side MOSFET gate drive is suddenly applied;
to check for low-side MOSFET turn off, LGATE pin is sensed. When the voltage at
LGATE has fallen, the high-side MOSFET gate drive is suddenly applied.
●
●
If the current flowing in the inductor is negative, voltage on PHASE pin will never drop. To
allow the low-side MOSFET to turn-on even in this case, a watchdog controller is enabled: if
the source of the high-side MOSFET doesn't drop, the low side MOSFET is switched on so
allowing the negative current of the inductor to recirculate. This mechanism allows the
system to regulate even if the current is negative.
Power conversion input is flexible: 5V, 12V bus or any bus that allows the conversion (See
maximum duty cycle limitation and recommended operating conditions) can be chosen
freely.
5.1
Power dissipation
L6726A embeds high current MOSFET drivers for both high side and low side MOSFETs: it
is then important to consider the power that the device is going to dissipate in driving them
in order to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers power.
Device Bias Power (P
DC
) depends on the static consumption of the device through the
supply pins and it is simply quantifiable as follow (assuming to supply HS and LS
drivers with the same VCC of the device):
●
●
Drivers power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency, the voltage supply of the
driver and total gate charge of the selected MOSFETs. It can be quantified considering
that the total power P
SW
dissipated to switch the MOSFETs (easy calculable) is
dissipated by three main factors: external gate resistance (when present), intrinsic
MOSFET resistance and intrinsic driver resistance. This last term is the important one
to be determined to calculate the device power dissipation. The total power dissipated
to switch the MOSFETs results:
where V
BOOT
- V
PHASE
is the voltage across the bootstrap capacitor.
P
DC
V
CC
I
CC
I
BOOT
+
(
)
=
P
SW
F
SW
Q
gHS
V
BOOT
V
PHASE
–
(
)
Q
gLS
V
CC
+
[
]
=
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