參數(shù)資料
型號： KMM466F804BS1
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 64 DRAM SODIMM(8M x 64 動態(tài) RAM模塊)
中文描述： 8米× 64內(nèi)存的SODIMM（8米× 64動態(tài)內(nèi)存模塊）
文件頁數(shù)： 4/21頁
文件大?。?/td> 409K
代理商： KMM466F804BS1
DRAM MODULE
KMM466F804BS1-L
* NOTE : I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
Item
Symbol
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
IL
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
8
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
*1 : V
CC
+1.3V at pulse width
≤
15ns, which is measured at V
CC
.
*2 : -1.3V at pulse width
≤
15ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
Unit
V
V
V
V
V
CC
V
SS
V
IH
V
CC
+0.3
*1
0.8
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
I
CCS
I
(IL)
I
(OL)
V
OH
V
OL
Symbol
Speed
KMM466F804BS1-L
Unit
Min
Max
488
448
I
CC1
-5
-6
-
-
mA
mA
I
CC2
Don
′
t care
-5
-6
-
-
-
16
488
448
mA
mA
mA
I
CC3
I
CC4
-5
-6
-
-
448
408
mA
mA
I
CC5
Don
′
t care
-5
-6
-
-
-
2.4
488
448
mA
mA
mA
I
CC6
I
CC7
I
CCS
Don
′
t care
-
-
3.2
3.2
mA
mA
I
I(L)
I
O(L)
Don
′
t care
-10
-10
10
10
uA
uA
V
OH
V
OL
Don
′
t care
2.4
-
-
0.4
V
V
: Operating Current * (RAS, CAS, Address cycling @t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Battery back-up current. Average power supply, Battery back-up mode.
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS,LCAS=0.2V,
DQ=Don
′
t care,
t
RC
=31.25us,
t
RAS
=
t
RAS
min~300ns
: Self Refresh Current, RAS=UCAS=LCAS=V
IL
, W=OE=A0~A11=V
CC
-0.2V or 0.2V, DQ~DQ63=V
CC
-0.2V or Open
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
V
CC
)
: Output High Voltage Level (I
OH
= -2mA)
:
Output Low Voltage Level (I
OL
= 2mA)
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