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參數(shù)資料
| 型號(hào)： | KMM466S203CT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx64 SDRAM SODIMM(2M x 64 動(dòng)態(tài) RAM模塊) |
| 中文描述： | 2Mx64 SDRAM內(nèi)存的SODIMM（2米× 64動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | KMM466S203CT |
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144pin SDRAM SODIMM
KMM466S203CT
REV. 4 April '98
Revision History
Revision . 2 (Mar. 1998)
Some Parameter values & Charcteristeristics of comp. level are changed as below :
- Input leakage currents (Inputs) :
±
5uA to
±
1uA
.
- Input leakage currents (I/O) :
±
5uA to
±
1.5uA
.
- Cin to be measured at V
DD
= 3.3V, T
A
= 23
°
C
,
f = 1MHz, V
REF
= 1.4V
±
200mV.
- AC Operating Condition is changed as defined :
V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns
.
Revision .3 (April 1998)
Self refresh current(I
CC6
) is changed.
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