參數(shù)資料
型號: KM416S1021C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interfacer(512K x 16位 x 2組同步動態(tài)RAM(帶SSTL接口))
中文描述: 為512k × 16 × 2同步DRAM銀行與薩里衛(wèi)星技術(shù)有限公司interfacer(為512k × 16位× 2組同步動態(tài)隨機(jī)存儲器(帶SSTL公司接口))
文件頁數(shù): 10/41頁
文件大?。?/td> 573K
代理商: KM416S1021C
CMOS SDRAM
DEVICE OPERATIONS - I
ELECTRONICS
REV. 4 Feb. '98
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A
1
Sequential
Interleave
A
0
0
0
1
1
0
1
0
1
0
1
2
3
1
2
3
0
2
3
0
1
3
0
1
2
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A
1
Sequential
Interleave
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
6
7
0
1
2
3
4
5
A
0
A
2
0
0
1
1
0
0
1
1
1
2
3
4
5
6
7
0
3
4
5
6
7
0
1
2
5
6
7
0
1
2
3
4
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
6
7
4
5
2
3
0
1
1
0
3
2
5
4
7
6
3
2
1
0
7
6
5
4
5
4
7
6
1
0
3
2
7
6
5
4
3
2
1
0
相關(guān)PDF資料
PDF描述
KM416S4020B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動態(tài)RAM)
KM416S4021B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動態(tài)RAM)
KM416S4030B 1M x 16Bitx 4 Banks Synchronous DRAM(1M x 16位 x4組同步動態(tài)RAM)
KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動態(tài)RAM(帶SSTL接口))
KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動態(tài)RAM(帶SSTL接口))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416S1021CT-G7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-GS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1120D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL