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參數(shù)資料
| 型號： | KM29W16000ATS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲器) |
| 中文描述： | 200萬× 8位NAND閃存（2米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 12/21頁 |
| 文件大?。?/td> | 250K |
| 代理商： | KM29W16000ATS |
KM29W16000ATS
FLASH MEMORY
12
READ1 OPERATION
(INTERCEPTED BY CE)
CE
CLE
R/B
I/O
0 ~ 7
WE
ALE
RE
Busy
00h
A
0
~ A
7
A8 ~ A
15
A
16
~ A
20
Dout N
Dout N+1
Dout N+2
Dout N+3
Page(Row)
Address
Address
Column
t
WB
t
AR
t
CHZ
t
R
t
RR
t
RC
READ2 OPERATION
(READ ONE PAGE)
CE
CLE
R/B
I/O
0 ~ 7
WE
ALE
RE
50H
A
0
~ A
7
A
8
~ A
15
A
16
~ A
20
Dout
255+M
Dout 263
M Address
Dout
255+M+1
Selected
Row
Start
address M
256
8
t
AR
t
R
t
RR
t
WB
≈
≈
≈
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