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參數(shù)資料
| 型號(hào)： | KM29W16000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 200萬× 8位NAND閃存（2米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 9/23頁 |
| 文件大?。?/td> | 266K |
| 代理商： | KM29W16000AT |
KM29W16000AT, KM29W16000AIT
FLASH MEMORY
9
Identifying Invalid Block(s) in the KM29W16000A
INVALID BLOCKS
KM29W16000A Technical Notes
All device locations are erased(FFh) prior to shipping. Device with invalid Block(s) will be randomly written with 00h data with in the
first or second page in the invalid Block(s). This page may or may not contain the invalid cell(s). The 00h data just marks the block(s)
that contains the invalid cell(s). A system that can utilize these devices must be able to recognize invalid block(s) via the fo llowing
suggested flow chart
(Figure 1).
Figure 1. Flow chart to create invalid block table.
Start
Set : Block = 0
Check "FF"
Set : Block n + 1
Block = 511
End
Create (or update)
invalid block(s) Table
No
No
Yes
Yes
The KM29W16000A Flash device may or may not contain up to 10 invalid blocks. Invalid blocks are defined as blocks that contain
one or more invalid bits. Typically, an invalid block will contain a single bad bit. Devices with invalid block(s) have the same quality
levels as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the per for-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system d esign
must be able to mask out the invalid block(s) via address mapping. The 1st block of the KM29W16000A, however, is fully guarantee d
to be a good block.
*
For the 1st or 2nd page
*
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