- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374353 > KM29W16000AT (SAMSUNG SEMICONDUCTOR CO. LTD.) 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM29W16000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 200萬(wàn)× 8位NAND閃存（2米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 6/23頁(yè) |
| 文件大小： | 266K |
| 代理商： | KM29W16000AT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
KM29W16000AT, KM29W16000AIT
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Vcc=2.7V ~ 3.6V
Vcc=3.6V ~ 5.5V
Unit
Min
Typ
Max
Min
Typ
Max
Operating
Current
Sequential Read
I
CC
1
tcycle=80ns, CE=V
IL
,
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
25
40
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
5
50
-
5
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 5.5V
-
-
±
10
±
10
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 5.5V
-
-
-
-
Input High Voltage
V
IH
I/O Pins
2.0
-
V
CC
Q+0.3
3.0
-
V
CC
Q+0.5
V
Except I/O Pins
2.0
-
V
CC
+0.3
3.0
-
V
CC
+0.5
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.6
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
8
10
-
mA
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
Q+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to +7.0
V
Temperature Under Bias
KM29W16000AT
T
BIAS
-10 to +125
°
C
KM29W16000AIT
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, KM29W16000AT
:
T
A
=0 to 70
°
C, KM29W16000AIT
:
T
A
=-40 to 85
°
C)
NOTE
: 1. Vcc and VccQ pins are separater each other.
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
-
5.5
V
Supply Voltage
V
CC
Q
1)
V
SS
2.7
-
5.5
V
Supply Voltage
0
0
0
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29W16000ATS | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
| KM29W32000AIT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000AT | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000AK1 | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
| KM29W32000ATS | 4M x 8 Bit NAND Flash Memory(4M x 8 位 NAND閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM2M COMBO-L | 制造商:Micro-Star International 功能描述:KM266 UATX AMD 266FSB DDR - Bulk |
| KM2M806XT | 制造商:Kontron 功能描述:M2M DEPLOYMENT UNIT FOR APPLICATIONS IN HARSH ENVIRONMENTS - Boxed Product (Development Kits) |
| KM2M810-01 | 制造商:Kontron 功能描述:FRI 2.0 DEVELOPMENT KIT WITHOUT THE ERICSSON MODEM - Boxed Product (Development Kits) |
| KM2M810-02 | 制造商:Kontron 功能描述:FRI 2.0 DEVELOPMENT KIT WITH ERICSSON MODEM - Boxed Product (Development Kits) |
| KM2M810-08 | 制造商:Kontron 功能描述:FRI 2.0 DEV KIT WITH ERICSSON MODEM, PTCRB CERTIFIED - Boxed Product (Development Kits) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。