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參數(shù)資料
| 型號： | KM29W16000AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲器) |
| 中文描述： | 200萬× 8位NAND閃存（2米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 12/23頁 |
| 文件大?。?/td> | 266K |
| 代理商： | KM29W16000AT |
KM29W16000AT, KM29W16000AIT
FLASH MEMORY
12
* Input Data Latch Cycle
CE
CLE
WE
I/O
0 ~ 7
DIN 0
DIN 1
DIN 255
ALE
t
CLH
t
CH
t
ALS
t
WC
t
WP
t
WH
t
DH
t
WP
t
DS
t
DS
t
DH
t
DS
t
DH
t
WP
* Sequential Out Cycle after Read
(CLE=L, WE=H, ALE=L)
RE
CE
R/B
I/O
0 ~ 7
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
Dout
Dout
Dout
t
RC
t
REA
t
REA
t
RR
t
CHZ*
t
CHZ*
t
REA
t
REH
≈
≈
≈
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