參數(shù)資料
型號: KFN2G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 9/124頁
文件大小: 1550K
代理商: KFN2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
9
2.1
Detailed Product Description
The MuxOneNAND is an advanced generation, high-performance NAND-based Flash memory.
It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page
buffer for the Flash array, and a one-time-programmable block.
The combination of these memory areas enable high-speed pipelining of reads from host
,
BufferRAM
,
Page Buffer
,
and NAND Flash
Array.
Clock speeds up to 54MHz with a x16 wide I/O yields a 68MByte/second bandwidth.
The MuxOneNAND also includes a Boot RAM and boot loader. This enables the device to efficiently load boot code at device startup
from the NAND Array without the need for off-chip boot device.
One block of the NAND Array is set aside as an OTP memory area. This area, available to the user, can be configured and locked
with secured user information.
On-chip controller interfaces enable the device to operate in systems without NAND Host controllers.
2.0
DEVICE DESCRIPTION
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