參數(shù)資料
型號: K9XXG08UXM-P
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: SSR H/S ZS 600V 70A 4-32VDC
中文描述: 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù): 37/39頁
文件大?。?/td> 680K
代理商: K9XXG08UXM-P
FLASH MEMORY
37
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
cc.
Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9XXGXXUXM).
Figure 16. Power-On Auto-Read
(3.3V device only)
V
CC
CE
CLE
I/O
X
ALE
RE
WE
1st
~ 1.8V
PRE
R/B
2nd
3rd
n th
t
R
相關(guān)PDF資料
PDF描述
K9XXG08UXM-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-E SSR H/S IO 230V 20A 4-32VDC
K9XXG16UXM-K SSR H/S PS 230V 50A 4-20MA E
K9XXG16UXM-P Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output.
K9XXG16UXM-Y Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output, bult-in current measurement.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9XXG08UXM-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08XXA-XCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG08XXA-XIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG16UXM-E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-K 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory