參數(shù)資料
型號: K9XXG08UXM-P
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: SSR H/S ZS 600V 70A 4-32VDC
中文描述: 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù): 22/39頁
文件大小: 680K
代理商: K9XXG08UXM-P
FLASH MEMORY
22
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Read Operation
(Intercepted by CE)
CE
CLE
R/B
WE
ALE
RE
Busy
00h
Dout N
Dout N+1
Dout N+2
Row Address
Column Address
t
WB
t
AR
t
CHZ
t
OH
t
R
t
RR
t
RC
30h
Read Operation
CE
CLE
R/B
WE
ALE
RE
Busy
00h
Col. Add1
Col. Add2
Row Add1
Dout N
Dout N+1
Column Address
Row Address
t
WB
t
AR
t
R
t
RC
t
RHZ
t
RR
Dout M
t
WC
Row Add2
30h
t
CLR
I/Ox
I/Ox
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
Row Add3
相關(guān)PDF資料
PDF描述
K9XXG08UXM-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-E SSR H/S IO 230V 20A 4-32VDC
K9XXG16UXM-K SSR H/S PS 230V 50A 4-20MA E
K9XXG16UXM-P Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output.
K9XXG16UXM-Y Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output, bult-in current measurement.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9XXG08UXM-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08XXA-XCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG08XXA-XIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG16UXM-E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-K 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory