參數(shù)資料
型號： K9XXG08UXM-P
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： SSR H/S ZS 600V 70A 4-32VDC
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 12/39頁
文件大?。?/td> 680K
代理商： K9XXG08UXM-P
FLASH MEMORY
12
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9K2GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Page Read with
Serial Access
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
15
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
20
100
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
-
-
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
20
-
-
±
20
Input High Voltage
V
IH*
-
V
CC
-0.4
-
V
CC
+
0.3
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9K2GXXQ0M:I
OH
=-100
μ
A
K9XXGXXUXM:I
OH
=-400
μ
A
Vcc-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9K2GXXQ0M :I
OL
=100uA
K9XXGXXUXM :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9K2GXXQ0M :V
OL
=0.1V
K9XXGXXUXM :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXGXXXXM-XCB0
:
T
A
=0 to 70
°
C, K9XXGXXXXM-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K2GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.7
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9K2GXXQ0M(1.8V) K9XXGXXUXM(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9XXGXXXXM-XCB0
T
BIAS
-10 to +125
°
C
K9XXGXXXXM-XIB0
-40 to +125
Storage Temperature
K9XXGXXXXM-XCB0
T
STG
-65 to +150
°
C
K9XXGXXXXM-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9XXG08UXM-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-E SSR H/S IO 230V 20A 4-32VDC
K9XXG16UXM-K SSR H/S PS 230V 50A 4-20MA E
K9XXG16UXM-P Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output.
K9XXG16UXM-Y Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output, bult-in current measurement.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9XXG08UXM-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08XXA-XCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG08XXA-XIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Preliminary FLASH MEMORY
K9XXG16UXM-E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG16UXM-K 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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