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參數(shù)資料
| 型號： | K9S6408V0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SmartMedia CARD |
| 中文描述： | SmartMedia卡 |
| 文件頁數(shù)： | 7/31頁 |
| 文件大?。?/td> | 481K |
| 代理商： | K9S6408V0C |
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K9S2808V0C/B
7
SmartMedia
TM
K9S5608V0C/B
K9S6408V0C/B
PRODUCT INTRODUCTION
The SmartMeida has the memory organization as following Table1. Spare sixteen columns are located from column address of 512
to 527. A 528-byte data register is connected to memory cell arrays and is accommodating data-transfer between the I/O buffers and
memory cell arrays during page read and page program operations. The memory array is made up of 16 cells that are serially con-
nected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 32 pages formed by two 16
cell memory array. The array organization is shown in Figure 2. The program and the read operations are executed on a page basis,
while the erase operation is executed on a block basis.
The SmartMedia has addresses multiplexed into 8 I/O's. This scheme dramatically reduces pin counts and allows system upgrade to
future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle except
for Block Erase and Page Program commands which require two cycles: one cycle for a setup and another for an execution. The
physical space of the SmartMedia varies according to its density and from 8MB to 32MB SmartMedia require three cycles for byte-
level addressing; column address, row address, in that order. Page Read and Page Program need the same three address cycles fol-
lowing the required command input. In Block Erase operation, however, only the two row address cycles are used. Device operations
are selected by writing specific commands into the command register. Table 2. defines the specific commands of the SmartMedia.
Table 1.MEMORY ORGANIZATION
Memory Organization
Number of rows(Pages)
Number of columns
K9S6408V0X
66Mbit (69,206,016 bit)
16,384 rows
528 columns
K9S2808V0X
132Mbit (138,412,032 bit)
32,768 rows
528 columns
K9S5608V0X
264Mbit (276,824,064 bit)
65,536 rows
528 columns
Table 2. COMMAND SETS
NOTE
: 1. The 00h command defines starting address of the 1st half of registers.The 01h command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, address pointer is automatically moved to the 1st half register(00h) on the
next cycle.
Caution : Any undefined command inputs are prohibited except for above command sets of Table2.
Function
1st. Cycle
2nd. Cycle
Acceptable Command during Busy
Read 1
00h/01h
(1)
-
Read 2
50h
-
Read ID
90h
-
Reset
FFh
-
O
Page Program
80h
10h
Block Erase
60h
D0h
Read Status
70h
-
O
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| K9VGMV | 制造商:Micro-Star International 功能描述:- Bulk |
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| K9W4G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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