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參數(shù)資料
| 型號： | K9S6408V0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SmartMedia CARD |
| 中文描述： | SmartMedia卡 |
| 文件頁數(shù)： | 29/31頁 |
| 文件大?。?/td> | 481K |
| 代理商： | K9S6408V0C |
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K9S2808V0C/B
29
SmartMedia
TM
K9S5608V0C/B
K9S6408V0C/B
V
CC
R/B
open drain output
Device
GND
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp
t
I
Rp(ohm)
Figure 15. Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
ibusy
Rp(min) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
2.0V
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
96
tf
189
290
381
4.2
4.2
4.2
4.2
3.3
1.65
1.1
0.825
0.8V
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read operations. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Figure 15). Its value can be
determined by the following guidance.
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PDF描述 |
|---|---|
| K9S3208V0A | 4M x 8 bit SmartMedia Card |
| K9S3208V0A-SSB0 | 4M x 8 bit SmartMedia Card |
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| KA10R25 | TSS KA Series |
| KA1222 | DUAL LOW NOISE EQUALIZER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9T1G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bits NAND Flash Memory |
| K9T1G08U0M-YIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC SINGLE (S/B X8 TSOP1 - Trays |
| K9VGMV | 制造商:Micro-Star International 功能描述:- Bulk |
| K9VGM-V | 制造商:Micro-Star International 功能描述:AMD ATHLON 64/1000MHZ FSB/AM2/VIA 58M890 - Bulk |
| K9W4G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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