參數(shù)資料
型號： K9K4G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述： 512M × 8位/ 256M × 16位NAND閃存
文件頁數(shù)： 9/38頁
文件大小： 601K
代理商： K9K4G08U0M
FLASH MEMORY
9
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9K4GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Page Read with
Serial Access
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
15
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
20
100
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
±
20
-
-
±
20
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
-
-
Input High Voltage
V
IH*
-
0.8xVcc
-
V
CC
+0.3 0.8xVcc
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
K9K4GXXQ0M :I
OH
=-100
μ
A
K9XXGXXUXM :I
OH
=-400
μ
A
Vcc-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9K4GXXQ0M :I
OL
=100uA
K9XXGXXUXM :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9K4GXXQ0M :V
OL
=0.1V
K9XXGXXUXM :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXGXXUXM-XCB0
:
T
A
=0 to 70
°
C, K9XXGXXUXM-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K4GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9K4GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9XXGXXUXM-XCB0
T
BIAS
-10 to +125
°
C
K9XXGXXUXM-XIB0
-40 to +125
Storage Temperature
K9XXGXXUXM-XCB0
T
STG
-65 to +150
°
C
K9XXGXXUXM-XIB0
Short Circuit Current
Ios
5
mA
相關PDF資料
PDF描述
K9K4G16Q0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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K9K8G08U0M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
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相關代理商/技術參數(shù)
參數(shù)描述
K9K4G08U0M-PIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K4G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9K4G16Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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