參數(shù)資料
型號(hào): K9K4G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述: 512M × 8位/ 256M × 16位NAND閃存
文件頁(yè)數(shù): 23/38頁(yè)
文件大?。?/td> 601K
代理商: K9K4G08U0M
FLASH MEMORY
23
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
X8 device : m = 2112byte
X16 device : m = 1056word
Page Program Operation
CE
CLE
R/B
WE
ALE
RE
80h
70h
I/O
0
Din
N
1 up to m Byte
Serial Input
Din
M
10h
SerialData
Input Command
Column Address
Row Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
I/Ox
Co.l Add1
Col. Add2
Row Add1
Row Add2 Row Add3
t
ADL
NOTES :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
相關(guān)PDF資料
PDF描述
K9K4G16Q0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K4G08U0M-PIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K4G08U1M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9K4G16Q0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory