參數(shù)資料
型號： K9K4G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述： 512M × 8位/ 256M × 16位NAND閃存
文件頁數(shù)： 5/38頁
文件大?。?/td> 601K
代理商： K9K4G08U0M
FLASH MEMORY
5
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
PIN DESCRIPTION
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
Pin Name
Pin Function
I/O
0
~ I/O
7
(K9XXG08XXM)
I/O
0
~ I/O
15
(K9K4G16X0M)
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE / CE1
CHIP ENABLE
The CE / CE1 input is the device selection control. When the device is in the Busy state, CE / CE1 high is
ignored, and the device does not return to standby mode in program or erase operation. Regarding CE /
CE1 control during read operation, refer to ’Page read’ section of Device operation .
CE2
CHIP ENABLE
The CE2 input enables the second K9K4GXXU0M
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B1/ R/B2
READY/BUSY OUTPUT
The R/B / R/B1 output indicates the status of the device operation. When low, it indicates that a program,
erase or random read operation is in process and returns to high state upon completion. It is an open drain
output and does not float to high-z condition when the chip is deselected or when outputs are disabled.
PRE
POWER-ON READ ENABLE
The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when
PRE pin is tied to Vcc.
Vcc
POWER
V
CC
is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
相關PDF資料
PDF描述
K9K4G16Q0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
K9K4G08U0M-PIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K4G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9K4G16Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*