參數(shù)資料
型號(hào)： K9K4G08Q0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述： 512M × 8位/ 256M × 16位NAND閃存
文件頁數(shù)： 37/38頁
文件大?。?/td> 601K
代理商： K9K4G08Q0M
FLASH MEMORY
37
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 17. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
Rp(min, 1.8V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
1.85V
3mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 3.3V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
1.8V device - V
OL
: 0.1V, V
OH
: Vcc
Q
-0.1V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
30
tf
60
90
120
1.7
1.7
1.7
1.7
1.7
0.85
0.57
0.43
C
L
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 50pF
1K
2K
3K
4K
50n
100n
150n
3m
2m
1m
50
tf
100
150
200
1.8
1.8
1.8
1.8
2.4
1.2
0.8
0.6
相關(guān)PDF資料
PDF描述
K9K4G08U0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16Q0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K4G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G08U0M-PIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K4G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9K4G16Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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