參數(shù)資料
型號(hào): K9K1G08U0M-YCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit NAND Flash Memory
中文描述: 128M的× 8位NAND閃存
文件頁數(shù): 30/37頁
文件大?。?/td> 467K
代理商: K9K1G08U0M-YCB0
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
30
Copy-Back Program
Figure 19. One Page Copy-Back program Operation
00h
A
0
~ A
7
& A
9
~ A
26
Source Address
I/O
0
~
7
R/B
Add.(4Cycles)
I/O
0
Pass
8Ah
70h
Fail
t
PROG
A
0
~ A
7
& A
9
~ A
26
Destination Address
Add.(4Cycles)
t
R
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the plane to another page within
the same plane without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential
execution of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read opera-
tion with "00h" command and the address of the source page moves the whole 528byte data into the internal buffer. As soon as the
device returns to Ready state, Page-Copy Data-input command (8Ah) with the address cycles of destination page followed may be
written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back Program opera-
tion is allowed only within the same memory plane. Once the Copy-Back Program is finished, any additional partial page program-
ming into the copied pages is prohibited before erase. A14 , A15 and A26 must be the same between source and target page.
Figure19 shows the command sequence for single plane operation.
"When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge loss is
not checked by external error detection/correction scheme. For this reason, two bit error correction is recommended for
the use of Copy-Back operation."
10h
相關(guān)PDF資料
PDF描述
K9K1G08U0M-YIB0 128M x 8 Bit NAND Flash Memory
K9K2G08U0A TV 8C 8#16 PIN WALL RECP
K9K2G08U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9XXG08UXM-E SSR H/S ZS 600V 50A 4-32VDC
K9XXG08UXM-K 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G16Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K2G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory