參數(shù)資料
型號: K9K1G08U0M-YCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit NAND Flash Memory
中文描述: 128M的× 8位NAND閃存
文件頁數(shù): 16/37頁
文件大小: 467K
代理商: K9K1G08U0M-YCB0
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
16
* Input Data Latch Cycle
CE
CLE
WE
I/O
0
~
7
DIN 0
DIN 1
DIN 511
ALE
t
ALS
t
CLH
t
WC
t
CH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
WP
t
WH
t
WP
t
WP
* Serial Access Out Cycle after Read
(CLE=L, WE=H, ALE=L)
RE
CE
R/B
I/O
0
~
7
Dout
Dout
Dout
t
RC
t
REA
t
RR
t
RHZ*
t
REA
t
REH
t
REA
t
CHZ*
t
RHZ*
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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