參數(shù)資料
型號： K8S5515ETC-SC1E0
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
封裝： 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44
文件頁數(shù)： 41/65頁
文件大?。?/td> 1196K
代理商： K8S5515ETC-SC1E0
- 46 -
K8S5615ETC
datasheet NOR FLASH MEMORY
Rev. 1.0
Case 1 : Start from "16N" address group
NOTE :
1) Address boundary occurs every 16 words beginning at address 000000FH , 000001FH , 000002FH , etc.
2) Address 000000H is also a boundary crossing.
3) No additional clock cycles are needed except for 1st boundary crossing.
Figure 20: Crossing of first word boundary in burst read mode.
Case 2 : Start from "16N+3" address group
NOTE :
1) Address boundary occurs every 16 words beginning at address 000000FH , 000001FH , 000002FH , etc.
2) Address 000000H is also a boundary crossing.
3) No additional clock cycles are needed except for 1st boundary crossing.
Figure 21: Crossing of first word boundary in burst read mode.
14th rising edge CLK
CR setting : A14=1, A13=0, A12=1, A11=0
CE
OE
RDY
CLK
A/DQ0:
AVD
tCEZ
tOEZ
tOER
00
0C
10
11
12
13
No Additional Cycle for First Word Boundary
0D
0E
0F
≈
0B
A16-A23
≈
0C
10
11
12
0F
0B
0D
0E
≈
A/DQ15
Aa
CE
OE
RDY
CLK
AVD
tCEZ
tOEZ
tOER
00
0E
12
13
14
Additional 1 Cycle for First Word Boundary
0F
10
14th rising edge CLK
CR setting : A14=1, A13=0, A12=1, A11=0
≈
0D
A/DQ0:
A16-A23
≈
0E
11
12
13
10
0D
≈
A/DQ15
Aa
0F
11
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