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參數(shù)資料
| 型號： | K8S5515ETC-SC1E0 |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 31/65頁 |
| 文件大?。?/td> | 1196K |
| 代理商： | K8S5515ETC-SC1E0 |
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K8S5615ETC
datasheet NOR FLASH MEMORY
Rev. 1.0
AC CHARACTERISTICS
18.4 Erase/Program Operation
NOTE :
1) Not 100% tested.
2) Internal programming algorithm is optimized for Buffer Program, so Normal word programming or Single word Buffer Program use Buffer Program algorithm.
3) Internal programming algorithm for supporting Accelerated mode uses a method to double the number of words programmed simultaneously.
4) Typical 32-word Buffer Program time pays due regard to that Each program data pattern ("11", "10". "01", "00") has a same portion in 32-word Buffer.
Parameter
Symbol
All speed options
Unit
Min
Typ
Max
WE Cycle Time1)
tWC
75
-
ns
Address Setup Time
tAS
5-
-
ns
Address Hold Time
tAH
2-
-
ns
AVD Low Time
tAVDP
12
-
ns
Data Setup Time
tDS
30
-
ns
Data Hold Time
tDH
0-
-
ns
Read Recovery Time Before Write
tGHWL
0-
-
ns
CE Setup Time
tCS
0-
-
ns
CE Hold Time
tCH
0-
-
ns
WE High to AVD low
tWEA
30
-
ns
WE Pulse Width
tWP
30
-
ns
WE Pulse Width High
tWPH
45
-
ns
Latency Between Read and Write Operations
tSR/W
0-
-
ns
Word Programming Operation 2)
tPGM
-80
-
μs
Single word Buffer Program 2)
tPGM_BP
-
250
-
μs
32-word Buffer Program 4)
tPGM_BP
-
89.6
-
μs
Accelerated Programming Operation 3)
tACCPGM
-80
-
μs
Accelerated Single word Buffer Program 3)
tACCPGM_BP
-1.4
-
μs
Accelerated 32-word Buffer Program 4)
tACCPGM_BP
-
44.8
-
μs
Block Erase Operation (64KW block)
tBERS
-0.6
-
sec
VPP Rise and Fall Time
tVPP
500
-
ns
VPP Setup Time (During Accelerated Programming)
tVPS
1-
-
μs
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