參數(shù)資料
型號(hào): K8S5515ETC-SC1E0
元件分類: PROM
英文描述: 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
封裝: 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44
文件頁(yè)數(shù): 14/65頁(yè)
文件大?。?/td> 1196K
代理商: K8S5515ETC-SC1E0
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K8S5615ETC
datasheet NOR FLASH MEMORY
Rev. 1.0
9.24 Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE, CE, AVD or WE do not initiate a write cycle.
9.25 Logical Inhibit
Write cycles are inhibited by holding any one of OE = VIL , CE = VIH or WE = VIH. To initiate a write cycle, CE and WE must be a logical zero while OE is
a logical one.
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