參數(shù)資料
型號(hào)： K4S643232C-TL60
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
中文描述： 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 29/43頁(yè)
文件大?。?/td> 1155K
代理商： K4S643232C-TL60
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 29
Page Read & Write Cycle at Same Bank @Burst Length=4
HIGH
Row Active
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note :
1. To write data before burst read ends, DQM should be asserted three cycle prior to write
command to avoid bus contention.
2. Row precharge will interrupt writing. Last data input, t
RDL
before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
4. For -55/60/70/80/10, tRDL=1CLK product can be supported within restricted amounts and it will be distinguished by bucket code
"NV". From the next generation, tRDL will be only 2CLK for every clock frequency
Read
(A-Bank)
tRCD
*Note 2
tRDL
*Note 1
*Note 3
tCDL
Qa0
Qa1
Qb0
Qb1
Qb2
Qa0
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd1
Dc0
Dc1
Dd0
Dd1
Write
(A-Bank)
BA
0
BA
1
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Ra
Ca
Cb
Cc
Cd
Ra
*Note 4
相關(guān)PDF資料
PDF描述
K4S643232C-TL70 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
K4S643232C-TL80 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 8-PDIP
K4S643232C Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70
K4S643232C-TC10 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
K4S643232C-TC55 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S643232C-TL70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232C-TL80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TC45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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