參數(shù)資料
型號(hào): K4S643232C-TL60
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù): 11/43頁(yè)
文件大小: 1155K
代理商: K4S643232C-TL60
K4S643232C
CMOS SDRAM
REV. 1.1 Nov. '99
- 11
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A
1
Sequential
Interleave
A
0
0
0
1
1
0
1
0
1
0
1
2
3
1
2
3
0
2
3
0
1
3
0
1
2
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A
1
Sequential
Interleave
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
6
7
0
1
2
3
4
5
A
0
A
2
0
0
1
1
0
0
1
1
1
2
3
4
5
6
7
0
3
4
5
6
7
0
1
2
5
6
7
0
1
2
3
4
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
6
7
4
5
2
3
0
1
1
0
3
2
5
4
7
6
3
2
1
0
7
6
5
4
5
4
7
6
1
0
3
2
7
6
5
4
3
2
1
0
相關(guān)PDF資料
PDF描述
K4S643232C-TL70 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
K4S643232C-TL80 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 8-PDIP
K4S643232C Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70
K4S643232C-TC10 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
K4S643232C-TC55 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
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K4S643232C-TL80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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