參數(shù)資料
型號(hào)： K4J55323QF-GC16
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit GDDR3 SDRAM
中文描述： 片256Mbit GDDR3 SDRAM的
文件頁數(shù)： 42/49頁
文件大小： 1027K
代理商： K4J55323QF-GC16
- 42 -
256M GDDR3 SDRAM
K4J55323QF-GC
Rev 1.8 (Apr. 2005)
TRUTH TABLE - CURRENT STATE BANK n
- COMMAND TO BANK m
NOTES :
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see TRUTH TABLE- CKE ) and after t
XSNR
has been
met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank
n
and the
commands shown are those allowed to be issued to bank
m
, assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
CURRENT STATE
/CS
/RAS
/CAS
/WE
COMMAND/ ACTION
NOTES
Any
H
X
X
X
DESELECT (NOP/ continue previous operation)
8
L
H
H
H
NO OPERATION (NOP/continue previous operation)
X
H
L
H
DATA TERMINATOR DISABLE
Idle
X
X
X
X
Any Command Otherwise Allowed to Bank m
Row Activating,
Active, or
Prechrging
L
L
H
H
ACTIVE (Select and activate row)
L
H
L
H
READ (Select column and start READ burst)
6
L
H
L
L
WRITE (Select Column and start WRITE burst)
6
L
L
H
L
PRECHARGE
Read
(Auto-Precharge
Disable)
L
L
H
H
ACTIVE (Select and activate row)
L
H
L
H
READ (Select column and start new READ burst)
6
L
H
L
L
WRITE (Select column and start WRITE burst)
6
L
L
H
L
PRECHARGE
Write
(Auto-Precharge
Disabled)
L
L
H
H
ACTIVE (Select and activate row)
L
H
L
H
READ (Select column and start READ burst)
6, 7
L
H
L
L
WRITE (Select column and start new WRITE burst)
6
L
L
H
L
PRECHARGE
Read
(With
Auto-Precharge)
L
L
H
H
ACTIVE (Select and activate row)
L
H
L
H
READ (Select column and start new READ burst)
6
L
H
L
L
WRITE (Select column and start WRITE burst)
6
L
L
H
L
PRECHARGE
Write
(With
Auto-Precharge)
L
L
H
H
ACTIVE (Select and activate row)
L
H
L
H
READ (Select column and start READ burst)
6
L
H
L
L
WRITE (Select column and start new WRITE burst)
6
L
L
H
L
PRECHARGE
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