- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374271 > K4H510438B-TCA0 (SAMSUNG SEMICONDUCTOR CO. LTD.) Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 PDF資料下載
參數(shù)資料
| 型號： | K4H510438B-TCA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4H510438B-TCA0 |
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Parameter
Specification
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.2 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.4V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510438B-TCA2 | Enclosure; For Use With:PC21/28-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:7.9"; External Width:5.6"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 |
| K4H510438B-TCB0 | Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes |
| K4H510438B-TLA0 | Enclosures; For Use With:PC36/31-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; Features:Impact Resistant EN 50102; UV Resistant to UL 508; Approval Categories:Flammability Rated UL94-5V; Protection Rated IP65 |
| K4H510438B-TLA2 | 128Mb DDR SDRAM |
| K4H510438B-TLB0 | MOUNTING PLATE, STEEL, FOR TA201610; Length / Height, external:170mm; Material:Steel; Thickness, material:1.5mm; Width, external:140mm RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510438B-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438B-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438B-TCB3 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 512M-Bit 128Mx4 2.5V 66-Pin TSOP-II T/R |
| K4H510438B-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438B-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。