參數(shù)資料
型號(hào)： K4H510438B-TCA0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 14/24頁(yè)
文件大?。?/td> 367K
代理商： K4H510438B-TCA0
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
Parameter
Specification
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.5 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.5 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
4.5 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
4.5 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5
0.6875
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.3125
6.5
7.0
VDD
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
V
Tims(ns)
AC overshoot/Undershoot Definition
16.0 AC Operating Conditions
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
相關(guān)PDF資料
PDF描述
K4H510438B-TCA2 Enclosure; For Use With:PC21/28-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:7.9"; External Width:5.6"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
K4H510438B-TCB0 Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
K4H510438B-TLA0 Enclosures; For Use With:PC36/31-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; Features:Impact Resistant EN 50102; UV Resistant to UL 508; Approval Categories:Flammability Rated UL94-5V; Protection Rated IP65
K4H510438B-TLA2 128Mb DDR SDRAM
K4H510438B-TLB0 MOUNTING PLATE, STEEL, FOR TA201610; Length / Height, external:170mm; Material:Steel; Thickness, material:1.5mm; Width, external:140mm RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H510438B-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TCB3 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 512M-Bit 128Mx4 2.5V 66-Pin TSOP-II T/R
K4H510438B-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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