參數資料
型號： K4H510438B-TCA0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
中文描述： 128MB DDR SDRAM的
文件頁數： 13/24頁
文件大?。?/td> 367K
代理商： K4H510438B-TCA0
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
(V
DD
=2.7V, T = 10
°
C)
15.0 DDR SDRAM IDD spec table
Symbol
128Mx4 (K4H510438C)
A2(DDR266@CL=2.0)
Unit Notes
B3(DDR333@CL=2.5)
B0(DDR266@CL=2.5)
IDD0
105
95
95
mA
IDD1
135
125
125
mA
IDD2P
5
5
5
mA
IDD2F
30
30
30
mA
IDD2Q
25
25
25
mA
IDD3P
30
30
30
mA
IDD3N
45
45
45
mA
IDD4R
140
125
125
mA
IDD4W
150
130
130
mA
IDD5
205
195
195
mA
IDD6
Normal
5
5
5
mA
Low power
3
3
3
mA
Optional
IDD7A
360
325
325
mA
Symbol
64Mx8 (K4H510838C)
Unit Notes
CC(DDR400@CL=3)
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
150
135
125
125
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
155
140
125
125
mA
IDD4W
175
150
130
130
mA
IDD5
220
205
195
195
mA
IDD6
Normal
5
5
5
5
mA
Low power
3
3
3
3
mA
Optional
IDD7A
385
360
325
325
mA
Symbol
32Mx16 (K4H511638C)
Unit Notes
CC(DDR400@CL=3)
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
160
140
130
130
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
190
170
155
155
mA
IDD4W
215
185
160
160
mA
IDD5
220
205
195
195
mA
IDD6
Normal
5
5
5
5
mA
Low power
3
3
3
3
mA
Optional
IDD7A
400
380
345
345
mA
相關PDF資料
PDF描述
K4H510438B-TCA2 Enclosure; For Use With:PC21/28-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:7.9"; External Width:5.6"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
K4H510438B-TCB0 Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
K4H510438B-TLA0 Enclosures; For Use With:PC36/31-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; Features:Impact Resistant EN 50102; UV Resistant to UL 508; Approval Categories:Flammability Rated UL94-5V; Protection Rated IP65
K4H510438B-TLA2 128Mb DDR SDRAM
K4H510438B-TLB0 MOUNTING PLATE, STEEL, FOR TA201610; Length / Height, external:170mm; Material:Steel; Thickness, material:1.5mm; Width, external:140mm RoHS Compliant: Yes
相關代理商/技術參數
參數描述
K4H510438B-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TCB3 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 512M-Bit 128Mx4 2.5V 66-Pin TSOP-II T/R
K4H510438B-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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