參數資料
型號: K4E641611D-TC60
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out
中文描述: 4米× 16位的CMOS動態(tài)隨機存儲器的擴展數據輸出
文件頁數: 24/36頁
文件大小: 882K
代理商: K4E641611D-TC60
CMOS DRAM
K4E661611D,
K4E641611D
RAS
V
IH
-
V
IL
-
UCAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR.
t
RASP
t
RP
t
RCD
t
ASR
t
CRP
Don
t care
HYPER PAGE MODE UPPER BYTE READ CYCLE
Undefined
LCAS
V
IH
-
V
IL
-
V
OH
-
V
OL
-
DQ0 ~ DQ7
V
OH
-
V
OL
-
DQ8 ~ DQ15
COLUMN
ADDRESS
t
CAS
t
CAS
t
CAS
t
CAS
t
CP
t
CP
t
CP
t
REZ
t
HPC
t
HPC
t
HPC
t
RHCP
t
CSH
t
CRP
t
RAH
t
ASC
t
CAH
t
CAH
t
CAH
t
ASC
t
CAH
t
RCS
t
OEA
t
RCH
t
RRH
COLUMN
ADDRESS
COLUMN
ADDR.
t
OEZ
t
OEP
t
CHO
t
CPA
t
CAC
VALID
DATA-OUT
t
OEP
t
OEZ
t
RAC
t
CAC
t
OLZ
t
CLZ
t
DOH
VALID
DATA-OUT
VALID
DATA-OUT
t
OCH
t
CPA
t
CAC
t
AA
t
CAC
t
AA
t
CPA
t
OEZ
VALID
DATA-OUT
VALID
DATA-OUT
OPEN
ó
t
ASC
t
RPC
t
RPC
t
RAD
t
ASC
t
AA
t
OEA
t
RAL
相關PDF資料
PDF描述
K4E641612B 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-L 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-TC 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612B-L 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612B-TC 4M x 16bit CMOS Dynamic RAM with Extended Data Out
相關代理商/技術參數
參數描述
K4E641612B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-TC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out