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參數(shù)資料
| 型號(hào)： | JS28F640P30B85 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56 |
| 封裝： | 14 X 20 MM, LEAD FREE, TSOP-56 |
| 文件頁(yè)數(shù)： | 89/102頁(yè) |
| 文件大?。?/td> | 1609K |
| 代理商： | JS28F640P30B85 |
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1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
89
Figure 44.
Block Erase Flowchart
Start
FULL ERASE STATUS CHECK PROCEDURE
Repeat for subsequent block erasures.
Full Status register check can be done after each block erase
or after a sequence of block erasures.
Write 0xFF after the last operation to enter read array mode.
Only the Clear Status Register command clears SR[1, 3, 4, 5].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
No
Suspend
Erase
1
0
0
0
1
1,1
1
1
0
Yes
Suspend
Erase
Loop
0
Write 0x20,
Block Address
Write 0xD0,
Block Address
Read Status
Register
SR[7] =
Full Erase
Status Check
(if desired)
Block Erase
Complete
Read Status
Register
Block Erase
Successful
SR[1] =
Block Locked
Error
BLOCK ERASE PROCEDURE
OpBus
Comments
Write
Block
Erase
Setup
Data = 0x20
Addr = Block to be erased (BA)
Write
Erase
Confirm
Data = 0xD0
Addr = Block to be erased (BA)
Read
None
Status Register data.
Idle
None
Check SR[7]:
1 = WSM ready
0 = WSM busy
OpBus
Comments
SR[3] =
V
PP
Range
Error
SR[4,5] =
Command
Sequence Error
SR[5] =
Block Erase
Error
Idle
None
Check SR[3]:
1 = V
PP
Range Error
Idle
None
Check SR[4,5]:
Both 1 = Command Sequence Error
Idle
None
Check SR[5]:
1 = Block Erase Error
Check SR[1]:
1 = Attempted erase of locked block;
erase aborted.
Idle
None
(Block Erase)
(Erase Confirm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JS28F640P30B85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| JS28F640P30BF65D | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays |
| JS28F640P30BF75A | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 75ns 56-Pin TSOP Tray 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MX16 PBF TSOP 1.8V 制造商:Micron Technology 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 75ns 56-Pin TSOP Tray |
| JS28F640P30BF75D | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS 56TSOP |
| JS28F640P30T85 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory |
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