參數(shù)資料
型號(hào)： JS28F640P30B85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, LEAD FREE, TSOP-56
文件頁數(shù)： 74/102頁
文件大?。?/td> 1609K
代理商： JS28F640P30B85
1-Gbit P30 Family
April 2005
74
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
The device programs the 64-bit and 128-bit user-programmable Protection Register data 16 bits at
a time (see
Figure 47, “Protection Register Programming Flowchart” on page 92
). Issuing the
Program Protection Register command outside of the Protection Register’s address space causes a
program error (SR[4] set). Attempting to program a locked Protection Register causes a program
error (SR[4] set) and a lock error (SR[1] set).
13.3.3
Locking the Protection Registers
Each Protection Register can be locked by programming its respective lock bit in the Lock
Register. To lock a Protection Register, program the corresponding bit in the Lock Register by
issuing the Program Lock Register command, followed by the desired Lock Register data (see
Section 9.2, “Device Commands” on page 50
). The physical addresses of the Lock Registers are
0x80 for register 0 and 0x89 for register 1. These addresses are used when programming the lock
registers (see
Table 29, “Device Identifier Information” on page 77
).
Bit 0 of Lock Register 0 is already programmed at the factory, locking the lower, pre-programmed
64-bit region of the first 128-bit Protection Register containing the unique identification number of
the device. Bit 1 of Lock Register 0 can be programmed by the user to lock the user-programmable,
64-bit region of the first 128-bit Protection Register. When programming Bit 1 of Lock Register 0,
all other bits need to be left as ‘1’ such that the data programmed is 0xFFFD.
Lock Register 1 controls the locking of the upper sixteen 128-bit Protection Registers. Each of the
16 bits of Lock Register 1 correspond to each of the upper sixteen 128-bit Protection Registers.
Programming a bit in Lock Register 1 locks the corresponding 128-bit Protection Register.
Caution:
After being locked, the Protection Registers cannot be unlocked.
相關(guān)PDF資料
PDF描述
JS28F128P30T85 Intel StrataFlash Embedded Memory
JS28F256P30B85 Intel StrataFlash Embedded Memory
JS28F256P30T85 Intel StrataFlash Embedded Memory
JS28F640P30T85 Intel StrataFlash Embedded Memory
JS28F128P30B85 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JS28F640P30B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
JS28F640P30BF65D 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays
JS28F640P30BF75A 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 75ns 56-Pin TSOP Tray 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MX16 PBF TSOP 1.8V 制造商:Micron Technology 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 75ns 56-Pin TSOP Tray
JS28F640P30BF75D 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75NS 56TSOP
JS28F640P30T85 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*