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參數(shù)資料
| 型號： | JDP2S05FS |
| 廠商： | Toshiba Corporation |
| 英文描述： | UHF~VHF Band RF Switch Applications |
| 中文描述： | ?甚高頻波段超高頻射頻開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | JDP2S05FS |
JDP2S05FS
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05FS
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: r
s
= 1.5
Ω
(typ.)
Low capacitance: C
T
= 0.32 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Forward current
I
F
50
mA
Power dissipation(Note:1)
Pd
150
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: When mounted on glass epoxy board
board size : 20mm
×
20mm
×
1.6mmt
Cu foot area : 4mm
×
4mm
×
0.035mmt
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
= 0.1
μ
A
20
―
―
V
Reverse current
I
R
V
R
= 20 V
―
―
0.1
μ
A
Forward voltage
V
F
I
F
= 50 mA
―
―
0.94
V
Capacitance(Note2)
C
T
V
R
= 1 V, f = 1 MHz
0.21
0.32
0.42
pF
Series resistance
r
s
I
F
= 1 mA, f = 100 MHz
―
1.5
2.2
Ω
Note2: Signal level when capacitance is measured. V
sig
= 100 mVrms
Marking
JEDEC
JEITA
TOSHIBA
Weight: 0.0006 g(Typ.)
―
―
1-1L1A
3
Unit:mm
0.6±0.05
0
0
C
0
0.2
±0.05
A
0.48
+0.02
-0.03
1
0.1±0.05
0
M
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