參數(shù)資料
型號(hào): JDP4P02AT
廠商: Toshiba Corporation
英文描述: UHF~VHF Band RF Switch Applications
中文描述: ?甚高頻波段超高頻射頻開關(guān)應(yīng)用
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 99K
代理商: JDP4P02AT
JDP4P02AT
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP4P02AT
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 4-pin small packages.
Low series resistance: r
s
= 1.0
Ω
(typ.)
Low capacitance: C
T
= 0.3 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
50
mA
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
= 10
μ
A
30
V
Reverse current
I
R
V
R
= 30 V
0.1
μ
A
Forward voltage
V
F
I
F
= 50 mA
0.9
0.94
V
Capacitance
C
T
V
R
= 1 V, f = 1 MHz
0.3
0.4
pF
Series resistance
r
s
I
F
= 10 mA, f = 100 MHz
1.0
1.5
Ω
Note: Signal level when capacitance is measured. V
sig
= 100 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1
1M1A
Weight: 0.0015 g(typ.)
1
2
3
4
TX
1.ANODE1
2.ANODE2
3.CATHODE2
4.CATHODE1
0
0
0.9±0.05
0
0
1.2±0.05
1
2
3
1
4
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