
JDS2S03S
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDS2S03S
VHF Tuner Band Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Small total capacitance: C
T
= 0.7 pF (typ.)
Low series resistance: r
s
= 0.6
(typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
100
mA
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
=
2 mA
0.85
V
Reverse current
I
R
V
R
=
15 V
0.1
μ
A
Reverse voltage
V
R
I
R
=
1
μ
A
30
V
Total capacitance
C
T
V
R
=
6 V, f
=
1 MHz
0.7
1.2
pF
Series resistance
r
s
I
F
=
2 mA, f
=
100 MHz
0.6
0.9
Ω
Note: Signal level when capacitance is measured: V
sig
=
20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
0