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參數(shù)資料
| 型號(hào)： | JDP2S05CT |
| 廠商： | Toshiba Corporation |
| 英文描述： | UHF~VHF Band RF Switch Applications |
| 中文描述： | ?甚高頻波段超高頻射頻開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | JDP2S05CT |
JDP2S05CT
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05CT
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: r
s
= 1.5
Ω
(typ.)
Low capacitance: C
T
= 0.32 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Forward current
I
F
50
mA
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
= 0.1
μ
A
20
V
Reverse current
I
R
V
R
= 20 V
0.1
μ
A
Forward voltage
V
F
I
F
= 50 mA
0.94
V
Capacitance(Note2)
C
T
V
R
= 1 V, f = 1 MHz
0.21
0.32
0.42
pF
Series resistance
r
s
I
F
= 1 mA, f = 100 MHz
1.5
2.2
Ω
Note1: Signal level when capacitance is measured. V
sig
= 100 mVrms
Marking
1
0.6±0.05
0
-
1
2
２：Anode
１：Cathode
0
0.05±0.03
0.5±0.03
0
0
0
JEDEC
JEITA
TOSHIBA
Weight: 0.00077 g(Typ.)
―
―
1-1P1A
Unit:mm
03
Cathode
Part Number
CST2
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