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參數(shù)資料
| 型號： | JDP2S02S |
| 廠商： | Toshiba Corporation |
| 英文描述： | UHF~VHF Band RF Attenuator Applications |
| 中文描述： | ?甚高頻波段超高頻射頻衰減器的應(yīng)用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 93K |
| 代理商： | JDP2S02S |
JDP2S02S
2001-12-05
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02S
UHF~VHF Band RF Attenuator Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: r
s
= 1.0
(typ.)
Low capacitance: C
T
= 0.3 pF (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Forward current
I
F
50
mA
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
= 10 μA
30
V
Reverse current
I
R
V
R
= 30 V
0.1
μA
Forward voltage
V
F
I
F
= 50 mA
0.9
0.94
V
Capacitance
C
T
V
R
= 1 V, f = 1 MHz
0.3
0.5
pF
Series resistance
r
s
I
F
= 10 mA, f = 100 MHz
1.0
1.5
Note: Signal level when capacitance is measured. V
sig
= 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
2
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| JDP2S04E | VHF~UHF Band RF Attenuator Applications |
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| JDP2S08SC | UHF~VHF Band RF Switch Applications |
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| JDP2S02S_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Attenuator Applications |
| JDP2S04E | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band RF Attenuator Applications |
| JDP2S04E_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band RF Attenuator Applications |
| JDP2S05CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Switch Applications |
| JDP2S05FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Switch Applications |
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