參數(shù)資料
型號： IXTT8P50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： Standard Power MOSFET - P-Channel Enhancement Mode Avalanche Rated
中文描述： 8 A, 500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 573K
代理商： IXTT8P50
IXTH 11P50
IXTT 11P50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= -10 V; I
D
= I
D25
, pulse test
5
9
S
C
iss
C
oss
C
rss
4700
430
pF
pF
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
135
pF
t
d(on)
t
r
t
d(off)
t
f
33
27
35
ns
ns
ns
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 4.7
(External)
35
ns
Q
G(on)
Q
GS
Q
GD
130
46
92
nC
nC
nC
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCS
0.42
K/W
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
10P50
11P50
-10
-11
A
A
I
SM
Repetitive; pulse width limited by T
JM
10P50
11P50
-40
-44
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
-3
V
t
rr
I
F
= I
S
, di/dt = 100 A/
μ
s
500
ns
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
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