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參數(shù)資料
| 型號(hào)： | IXTT82N25P |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | A/D Converter (A-D) IC; Resolution (Bits):16; ADC Sample Rate:100kSPS; Input Channels Per ADC:2; INL +/-:0.002LSB; Data Interface:Serial; Package/Case:28-PLCC; IC Generic Number:5101; Interface Type:Serial |
| 中文描述： | 82 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 610K |
| 代理商： | IXTT82N25P |
2004 IXYS All rights reserved
Fig. 13. M axim um Transie nt The rm al Res is tance
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Pulse Width - milliseconds
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IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
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| IXTT88N15 | 功能描述:MOSFET 88 Amps 150 V 0.022 W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT88N30P | 功能描述:MOSFET 88 Amps 300V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT8P50 | 功能描述:MOSFET -8 Amps -500V 1.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT90P10P | 功能描述:MOSFET -90.0 Amps -100V 0.250 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTT96N15P | 功能描述:MOSFET 96 Amps 150V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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