參數(shù)資料
型號： IXTT82N25P
廠商： IXYS CORP
元件分類： JFETs
英文描述： A/D Converter (A-D) IC; Resolution (Bits):16; ADC Sample Rate:100kSPS; Input Channels Per ADC:2; INL +/-:0.002LSB; Data Interface:Serial; Package/Case:28-PLCC; IC Generic Number:5101; Interface Type:Serial
中文描述： 82 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 4/5頁
文件大?。?/td> 610K
代理商： IXTT82N25P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
V
DS
- Volts
20
25
30
35
40
C
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
15
30
45
Q
G
- nanoCoulombs
60
75
90
105 120 135 150
V
G
V
DS
= 125V
I
D
= 41A
I
G
= 10mA
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4
4.5
5
5.5
V
GS
- Volts
6
6.5
7
7.5
8
I
D
T
J
= 125oC
25oC
-40oC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
140
160
180
I
D
- Amperes
g
f
T
J
= -40oC
25oC
125oC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
40
80
120
160
200
240
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
- Volts
I
S
T
J
= 125oC
T
J
= 25oC
Fig. 12. Forward-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
DS
- Volts
I
D
100μs
1ms
DC
T
J
= 150oC
T
C
= 25oC
R
DS(on)
Limit
10ms
25μs
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
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IXTT90P10P 功能描述:MOSFET -90.0 Amps -100V 0.250 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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