參數(shù)資料
型號： IXTT82N25P
廠商： IXYS CORP
元件分類： JFETs
英文描述： A/D Converter (A-D) IC; Resolution (Bits):16; ADC Sample Rate:100kSPS; Input Channels Per ADC:2; INL +/-:0.002LSB; Data Interface:Serial; Package/Case:28-PLCC; IC Generic Number:5101; Interface Type:Serial
中文描述： 82 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 610K
代理商： IXTT82N25P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
30
52
S
C
iss
C
oss
C
rss
4800
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
900
210
pF
pF
t
d(on)
t
r
t
d(off)
t
f
29
20
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 4
(External)
78
22
ns
ns
Q
g(on)
Q
gs
Q
gd
142
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
74
nC
nC
R
thJC
R
thCH
0.25K/W
TO-3P
TO-264
0.21
0.15
K/W
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
82
A
I
SM
Repetitive
250
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 100 V
200
ns
Q
RM
2.0
μ
C
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
TO-268 Outline
TO-3P Outline
TO-264 AA Outline
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