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參數(shù)資料
| 型號(hào)： | IXGR60N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 120K |
| 代理商： | IXGR60N60U1 |
1 - 5
2000 IXYS All rights reserved
Low V
CE(sat)
IGBT
with Diode
ISOPLUS247
TM
(Electrically Isolated Back Surface)
IXGR 60N60U1
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25 C to 150 C
= 25 C to 150 C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
I
C25
I
C100
I
CM
SSOA
(RBSOA)
Continuous
Transient
20
30
V
V
T
C
T
C
T
C
V
GE
= 15 V, T
= 125 C, R
= 10
Clamped inductive load; V
CL
= 0.8 V
CES
T
C
= 25 C
= 25 C
= 90 C
= 25 C, 1 ms
75
60
200
A
A
A
I
CM
= 100
A
P
C
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
300
W
-55 ..+ 150
150
-55...+ 150
C
C
C
1.6 mm (0.062 in.) from case for 10 s
300
C
50/60Hz, RMS, t = 1minute, leads-to tab
2500
V
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
250
A
2
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C100
, V
GE
= 15 V
1.7
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low collector to tab capacitance
(<25pF)
Rugged polysilicon gate cell structure
Fast intrinsic Rectifier
Low V
IGBT and standard diode
for minimum on-state conduction
losses
MOS Gate turn-on for drive simplicity
Applications
Solid state relays
Capacitor discharge circuits
High power ignition circuits
Advantages
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
V
CES
I
C25
V
CE(sat)
=
=
=
600 V
75 A
1.7 V
ISOPLUS247
TM
GCE
Isolated back surface*
98595C (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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