參數(shù)資料
型號： ITF86110DK8T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET
中文描述： 30 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 9/13頁
文件大?。?/td> 200K
代理商： ITF86110DK8T
9
PSPICE Electrical Model
.SUBCKT ITF86110DK8T 2 1 3 ;
REV 9 Dec 1999
CA 12 8 6.4e-10
CB 15 14 6.48e-10
CIN 6 8 6.95e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 37.6
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.4e-3
RGATE 9 20 2.83
RLDRAIN 2 5 10
RLGATE 1 9 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 14.0e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*175),2))}
.MODEL DBODYMOD D (IS = 9.7e-13 RS = 8.5e-3 TRS1 = 2.5e-3 TRS2 = -2.9e-6 IKF= 3.0 XTI = 3.5 CJO = 5.6e-10 TT = 9.1e-9 VJ = 0.65 M = 0.44)
.MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = 4.0e-3 TRS2 = -6.0e-6)
.MODEL DESD1MOD D (BV = 11.24 Tbv1= -2.5e-3 N= 19 RS = 280)
.MODEL DESD2MOD D (BV = 11.24 Tbv1= -2.5e-3 N= 19 RS = 280)
.MODEL DPLCAPMOD D (CJO = 5.0e-10 IS = 1e-30 VJ = 0.34 M = 0.44)
.MODEL MMEDMOD NMOS (VTO = 2.52 KP = 24 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.83 RS = 0.075)
.MODEL MSTROMOD NMOS (VTO = 3.04 KP = 66 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u LAMBDA = 0.045)
.MODEL MWEAKMOD NMOS (VTO = 2.01 KP = 0.09 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.3 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 7.95e-4 TC2 = -1.55e-6)
.MODEL RDRAINMOD RES (TC1 = 3.78e-2 TC2 = 4.99e-5)
.MODEL RSLCMOD RES (TC1 = 4.07e-3 TC2 = 2.25e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -3.5e-3 TC2 = -7.8e-6)
.MODEL RVTEMPMOD RES (TC1 = -8.0e-4 TC2 = 1.0e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -3.1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.1 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
16
EVTHRES
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
18
22
9
ESG
LGATE
RLGATE
20
+
-
+
DESD1
91
DESD2
6
ITF86110DK8T
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