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參數(shù)資料
| 型號： | ITF86110DK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET |
| 中文描述： | 30 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 200K |
| 代理商： | ITF86110DK8T |
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.90
0.95
1.00
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
1.05
50
2000
0.1
1.0
10
30
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
100
1000
0
2
4
6
8
10
0
8
12
16
V
G
,
V
DD
= 15V
Q
g
, GATE CHARGE (nC)
I
D
= 6.5A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER:
4
200
300
400
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 2.0A
t
r
t
f
t
d(ON)
t
d(OFF)
100
500
30
60
90
120
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 7.5A
t
d(OFF)
t
r
t
d(ON)
t
f
ITF86110DK8T
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