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參數(shù)資料
| 型號： | ITF86110DK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET |
| 中文描述： | 30 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 200K |
| 代理商： | ITF86110DK8T |
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
DS
= 30V, V
GS
= 0V
V
GS
=
±
16V
30
-
-
V
Zero Gate Voltage Drain Current
-
-
10
μ
A
μ
A
Gate to Source Leakage Current
-
-
±
10
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
I
D
= 7.5A, V
GS
= 10V (Figures 8, 9)
I
D
= 2.0A, V
GS
= 4.5V (Figure 8)
I
D
= 1.5A, V
GS
= 4.0V (Figure 8)
1.5
-
2.5
V
Drain to Source On Resistance
-
0.020
0.025
-
0.026
0.034
-
0.031
0.042
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambi-
ent
R
θ
JA
Pad Area = 0.14 in
2
(90.3 mm
2
) (Note 2)
Pad Area = 0.027 in
2
(17.4 mm
2
) (Figure 20)
Pad Area = 0.006 in
2
(3.87 mm
2
) (Figure 20)
-
-
50
o
C/W
o
C/W
o
C/W
-
-
191
-
-
228
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
DD
= 15V, I
D
= 2.0A
V
GS
=
4.5V,
R
GS
= 1.3
(Figures 14, 18, 19)
-
10
-
ns
Rise Time
-
230
-
ns
Turn-Off Delay Time
-
12
-
ns
Fall Time
-
33
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
DD
= 15V, I
D
= 7.5A
V
GS
=
10V,
R
GS
= 2.2
(Figures 15, 18, 19)
-
8
-
ns
Rise Time
-
55
-
ns
Turn-Off Delay Time
-
17
-
ns
Fall Time
-
4
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,
I
D
= 6.5A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
15
-
nC
Gate Charge at 5V
-
9
-
nC
Threshold Gate Charge
-
0.80
-
nC
Gate to Source Gate Charge
-
2.8
-
nC
Gate to Drain “Miller” Charge
-
3.8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figures 12)
-
750
-
pF
Output Capacitance
-
200
-
pF
Reverse Transfer Capacitance
-
80
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
Q
RR
I
SD
= 6.5A
I
SD
= 6.5A, dI
SD
/dt = 100A/
μ
s
I
SD
= 6.5A, dI
SD
/dt = 100A/
μ
s
-
0.79
-
V
Reverse Recovery Time
-
26
-
ns
Reverse Recovered Charge
-
20
-
nC
ITF86110DK8T
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