參數(shù)資料
型號: ISL6741
廠商: Intersil Corporation
英文描述: Flexible Double-Ended Voltage and Current Mode PWM Controllers
中文描述: 靈活的雙端電壓和電流模式PWM控制器
文件頁數(shù): 15/21頁
文件大小: 507K
代理商: ISL6741
15
MOSFET Selection
The criteria for selection of the primary side half-bridge FETs
and the secondary side synchronous rectifier FETs is largely
based on the current and voltage rating of the device.
However, the FET drain-source capacitance and gate
charge cannot be ignored.
The zero voltage switch (ZVS) transition timing is dependent
on the transformer’s leakage inductance and the
capacitance at the node between the upper FET source and
the lower FET drain. The node capacitance is comprised of
the drain-source capacitance of the FETs and the
transformer parasitic capacitance. The leakage inductance
and capacitance form an LC resonant tank circuit which
determines the duration of the transition. The amount of
energy stored in the LC tank circuit determines the transition
voltage amplitude. If the leakage inductance energy is too
low, ZVS operation is not possible and near or partial ZVS
operation occurs. As the leakage energy increases, the
voltage amplitude increases until it is clamped by the FET
body diode to ground or V
IN
, depending on which FET
conducts. When the leakage energy exceeds the minimum
required for ZVS operation, the voltage is clamped until the
energy is transferred. This behavior increases the time
window for ZVS operation.This behavior is not without
consequences, however. The transition time and the period
of time during which the voltage is clamped reduces the
effective duty cycle.
The gate charge affects the switching speed of the FETs.
Higher gate charge translates into higher drive requirements
and/or slower switching speeds. The energy required to
drive the gates is dissipated as heat.
The maximum input voltage, V
IN
, plus transient voltage,
determines the voltage rating required. With a maximum
input voltage of 53V for this application, and if we allow a
10% adder for transients, a voltage rating of 60V or higher
will suffice.
The RMS current through the each primary side FET can be
determined from EQ. 17, substituting 5A of primary current
FIGURE 7C. INT. LAYER 2: 2 TURNS PRIMARY WINDING
FIGURE 7D. INT. LAYER 3: 2 TURNS PRIMARY WINDING
FIGURE 7E. INT. LAYER 4: 1 TURN SECONDARY WINDING
FIGURE 7F. BOTTOM LAYER: 1 TURN SECONDARY AND SR
WINDINGS
FIGURE 7G. PWB DIMENSIONS
0.689
0.807
0.639
0.403
0.169
0.000
1.054
0.774
0.479
0.184
0.000
0.358
ISL6740, ISL6741
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相關代理商/技術參數(shù)
參數(shù)描述
ISL6741IB 功能描述:電流型 PWM 控制器 CUR PWM MODE CNTRLR 16LD N RoHS:否 制造商:Texas Instruments 開關頻率:27 KHz 上升時間: 下降時間: 工作電源電壓:6 V to 15 V 工作電源電流:1.5 mA 輸出端數(shù)量:1 最大工作溫度:+ 105 C 安裝風格:SMD/SMT 封裝 / 箱體:TSSOP-14
ISL6741IB-T 功能描述:IC REG CTRLR PWM CM 16-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:100% 電源電壓:8.2 V ~ 30 V 降壓:無 升壓:無 回掃:是 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:0°C ~ 70°C 封裝/外殼:8-DIP(0.300",7.62mm) 包裝:管件 產(chǎn)品目錄頁面:1316 (CN2011-ZH PDF)
ISL6741IBZ 功能描述:IC REG CTRLR PWM CM 16-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 包裝:帶卷 (TR)
ISL6741IBZ-T 功能描述:IC REG CTRLR PWM CM 16-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 包裝:帶卷 (TR)
ISL6741IV 功能描述:IC REG CTRLR PWM CM 16-TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:100% 電源電壓:8.2 V ~ 30 V 降壓:無 升壓:無 回掃:是 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:0°C ~ 70°C 封裝/外殼:8-DIP(0.300",7.62mm) 包裝:管件 產(chǎn)品目錄頁面:1316 (CN2011-ZH PDF)