參數(shù)資料
型號(hào): IRFL014N
廠商: International Rectifier
英文描述: 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述: 55V的,1.9A,N溝道HEXFET功率MOSFET(55V的,1.9A,?溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 144K
代理商: IRFL014N
IRFL014N
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
50
100
150
200
250
300
350
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
2
Q , Total Gate Charge (nC)
4
6
8
10
V
G
A
I = 1.7A
V = 44V
V = 28V
V = 11V
FOR TEST CIRCUIT
SEE FIGURE 9
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
T = 25°C
T = 150°C
V = 0V
V , Source-to-Drain Voltage (V)
I
S
A
0.1
1
10
100
1
10
100
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100μs
1ms
10ms
A
T = 25°C
T = 150°C
Single Pulse
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