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1/19/00
IRFL014N
HEXFET
Power MOSFET
PD- 92003A
www.irf.com
1
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.16
I
D
= 1.9A
Fifth Generation HEXFET
MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET
power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Description
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
Parameter
Typ.
90
50
Max.
120
60
Units
R
θ
JA
R
θ
JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Thermal Resistance
°C/W
Parameter
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
A
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
SOT-223
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| IRFN3710 | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A) |
| IRFN440 | POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFL014NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 2.7A 4-Pin(3+Tab) SOT-223 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 2.7A 4PIN SOT-223 - Rail/Tube |
| IRFL014NPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL014NTR | 制造商:International Rectifier 功能描述:MOSFET, 55V, 1.9A, 160 mOhm, 7 nC Qg, SOT-223 |
| IRFL014NTRPBF | 功能描述:MOSFET MOSFT 55V 1.9A 160mOhm 7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL014NTRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 55 V 2.1 W 7 nC Hexfet Power Mosfet Surface Mount - SOT-223 |
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